Figure 1: The epilayer structure of an InGaN green laser diode on a c-sapphire substrate. The key to the success of Miyoshi et. al. was their ability to improve the quality of the InGaN active layers.

All three laser diodes have an internal monitor photodiode, a package size of just 5.6 mm and operate at temperatures of up to 75 °C. Sony Creative Software has announced upgrades to its DVD ...