It is the second course in the "Semiconductor Power Device" specialization that focusses on diodes, MOSFETs, and IGBTs but also covers legacy devices (BJTs, Thyristors and TRIACS) as well as ...

ROHM has been working to develop high-performance SiC SBDs that offer breakdown voltages suitable for high-voltage ...

Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC ...

The surface-mount diodes improve insulation, support high-voltage systems in cars and industry, and are easy to install on ...

The reliability of typical SiC MOSFETs is degraded by increased On-resistance when its body diodes are bipolar energized [3] during reverse conduction operation [4]. Toshiba SiC MOSFETs alleviate this ...

Toshiba Electronics Europe has announced early test samples in bare die format of new 1200V SiC MOSFETs with low ...

Impact ionization avalanche transit-time (IMPATT) diodes are high voltage diodes which operate at a very high frequency and power. Schottky barrier diodes are used in high frequency and fast-switching ...

Rectifiers are available in many different configurations and most diode junctions in the circuit are either a PN junction or Schottky diode. Rectifiers use one of several general circuitry designs in ...